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| Low VCE(sat) IGBT with Diode ISOPLUS247TM IXGR 60N60U1 VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC100 ICM Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms Maximum Ratings 600 600 20 30 75 60 200 ICM = 100 300 -55 ..+ 150 150 -55...+ 150 V V V V A A A A W C C C C V g ISOPLUS247TM G C E Isolated back surface* G = Gate, E = Emitter, * Patent pending Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation * Low collector to tab capacitance (<25pF) * Rugged polysilicon gate cell structure * Fast intrinsic Rectifier * Low VCE(sat) IGBT and standard diode for minimum on-state conduction losses * MOS Gate turn-on for drive simplicity Applications * Solid state relays * Capacitor discharge circuits * High power ignition circuits Advantages * Space savings (two devices in one package) * Reduces assembly time and cost * High power density C = Collector, TAB = Collector SSOA VGE = 15 V, TVJ = 125C, RG = 10 W (RBSOA) Clamped inductive load; VCL = 0.8 VCES PC TJ TJM Tstg TL V ISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60Hz, RMS, t = 1minute, leads-to tab TC = 25C 300 2500 5 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 150C 5.5 250 2 100 1.7 V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 250 mA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC100, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. 98595C (7/00) (c) 2000 IXYS All rights reserved 1-5 IXGR 60N60U1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 40 S ISOPLUS 247 (IXGR) OUTLINE gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri td(off) tfi Eoff RthJC RthCK IC = IC100; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 % 4000 VCE = 25 V, VGE = 0 V, f = 1 MHz 340 100 200 IC = IC100, VGE = 15 V, VCE = 0.5 VCES 35 80 Inductive load, TJ = 25C IC = IC100, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC100, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 50 200 600 500 16 50 240 1000 1000 26 800 700 pF pF pF nC nC nC ns ns ns ns mJ ns ns ns ns mJ 0.5 K/W Dim. 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 0.15 K/W Reverse Diode Symbol VF RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.2 V IF = IC100, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % 1.0 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-5 IXGR 60N60U1 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 TJ = 25C 350 TJ = 25C VGE = 15V 13V 300 IC - Amperes IC - Amperes VGE = 15V 13V 11V 9V 7V 250 200 150 11V 9V 100 50 0 7V 0 2 4 6 8 10 VCE - Volts VCE - Volts Figure 1. Saturation Voltage Characteristics 200 175 150 VGE = 15V Figure 2. Extended Output Characteristics 1.8 VGE = 15V IC = 120A VCE (sat) - Normalized 1.6 1.4 1.2 1.0 IC = 30A IC - Amperes 125 100 75 50 25 0 0 1 TJ = 25 C TJ = 125 C o o IC = 60A 0.8 0.6 25 2 3 4 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 3. Saturation Voltage Characteristics Figure 4. Temperature Dependence of VCE(sat) 1.3 100 BV/VGE(th) - Normalized 1.2 1.1 1.0 0.9 0.8 0.7 VGE(th) IC = 250A BVCES IC = 250A IC - Amperes 10 TJ = 125 C RG = 4.7W dV/dt < 5V/ns o 1 0.1 0 100 200 300 400 500 600 0.6 -50 -25 0 25 50 75 100 125 150 VCE - Volts TJ - Degrees C Figure 5. Admittance Curves Figure 6. Capacitance Curves (c) 2000 IXYS All rights reserved 3-5 IXGR 60N60U1 1000 TJ = 125C 40 RG = 10 1000 TJ = 125C IC = 60A Eoff 18 16 tfi tfi - nanoseconds tfi - nanoseconds 750 500 30 tfi 800 Eoff - milliJoules Eoff - millijoules 20 Eoff 600 14 12 10 0 10 20 30 40 50 250 0 0 20 40 60 80 100 10 400 0 120 200 IC - Amperes RG - Ohms Figure 7. Dependence of EON and EOFF on IC. 15 12 IC = 60A VCE = 300V Figure 8. Dependence of EON and EOFF on RG. 10000 Capacitance - picofards Cies VGE - Volts 1000 9 6 3 0 0 50 100 150 200 250 100 10 0 10 20 30 40 QG - nanocoulombs VCE - Volts Figure 9. Gate Charge 1 Figure 10. Turn-off Safe Operating Area ZthJC (K/W) 0.1 0.01 D = Duty Cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. IGBT Transient Thermal Resistance (c) 2000 IXYS All rights reserved 4-5 IXGR 60N60U1 Fig. 12 Forward current versus voltage drop. Fig. 13 Recovery charge versus -diF/dt. Fig. 14 Peak reverse current versus -diF/dt. Fig. 15. Dynamic parameters versus junction temperature. Fig. 16 Recovery time versus -diF/dt. Fig. 17 Peak forward voltage vs. diF/dt. Fig. 18 Transient thermal impedance junction to case. (c) 2000 IXYS All rights reserved 5-5 |
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